IPP095N20NM6AKSA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™ 6

Part Status

Active

Rds On (Max) @ Id, Vgs

8.7mOhm @ 62A, 15V

Vgs(th) (Max) @ Id

4.5V @ 186µA

Gate Charge (Qg) (Max) @ Vgs

66 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5500 pF @ 100 V

FET Type

N-Channel

Power Dissipation (Max)

3.8W (Ta), 300W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

200 V

Current - Continuous Drain (Id) @ 25°C

13A (Ta), 116A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V, 15V

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-U04

Package / Case

TO-220-3

Packaging

Tube