Component information
IPP65R190CFD7AAKSA1
IPP65R190CFD7AAKSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Gate Charge (Qg) (Max) @ Vgs
- 28 nC @ 10 V
- Mfr
- Infineon Technologies
- Vgs (Max)
- ±20V
- Series
- CoolMOS™
- Input Capacitance (Ciss) (Max) @ Vds
- 1291 pF @ 400 V
- Packaging
- Tube
- Power Dissipation (Max)
- 77W (Tc)
- Part Status
- Active
- Operating Temperature
- -40°C ~ 150°C (TJ)
- FET Type
- N-Channel
- Grade
- Automotive
- Technology
- MOSFET (Metal Oxide)
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 650 V
- Mounting Type
- Through Hole
- Current - Continuous Drain (Id) @ 25°C
- 14A (Tc)
- Supplier Device Package
- PG-TO220-3
- Rds On (Max) @ Id, Vgs
- 190mOhm @ 6.4A, 10V
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 4.5V @ 320µA
- Base Product Number
- IPP65R190
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ