Component information
IPT015N10NF2SATMA1
IPT015N10NF2SATMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Rds On (Max) @ Id, Vgs
- 1.5mOhm @ 150A, 10V
- Mfr
- Infineon Technologies
- Vgs(th) (Max) @ Id
- 3.8V @ 267µA
- Series
- StrongIRFET™ 2
- Gate Charge (Qg) (Max) @ Vgs
- 242 nC @ 10 V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Vgs (Max)
- ±20V
- Part Status
- Active
- Input Capacitance (Ciss) (Max) @ Vds
- 11000 pF @ 50 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 3.8W (Ta), 300W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 100 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 35A (Ta), 315A (Tc)
- Supplier Device Package
- PG-HSOF-8-10
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Package / Case
- 8-PowerSFN
Documentation and references
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