IPT017N12NM6ATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™ 6

Part Status

Active

Vgs(th) (Max) @ Id

3.6V @ 275µA

Gate Charge (Qg) (Max) @ Vgs

141 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11000 pF @ 60 V

Power Dissipation (Max)

3W (Ta), 395W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120 V

Current - Continuous Drain (Id) @ 25°C

29A (Ta), 331A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 150A, 10V

Mounting Type

Surface Mount

Supplier Device Package

PG-HSOF-8

Package / Case

8-PowerSFN

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

IPT017