IPT020N10N5ATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™ 5

Part Status

Active

Vgs(th) (Max) @ Id

3.8V @ 202µA

Gate Charge (Qg) (Max) @ Vgs

152 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11000 pF @ 50 V

Power Dissipation (Max)

273W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

31A (Ta), 260A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

2mOhm @ 150A, 10V

Mounting Type

Surface Mount

Supplier Device Package

PG-HSOF-8-1

Package / Case

8-PowerSFN

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

IPT020