IPT022N10NF2SATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

StrongIRFET™ 2

Part Status

Active

Rds On (Max) @ Id, Vgs

2.25mOhm @ 150A, 10V

Vgs(th) (Max) @ Id

3.8V @ 169µA

Gate Charge (Qg) (Max) @ Vgs

155 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7300 pF @ 50 V

FET Type

N-Channel

Power Dissipation (Max)

3.8W (Ta), 250W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

29A (Ta), 236A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Surface Mount

Supplier Device Package

PG-HSOF-8-10

Package / Case

8-PowerSFN

Packaging

Tape & Reel (TR); Cut Tape (CT)