IPT023N10NM5LF2ATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™ 5

Part Status

Active

Rds On (Max) @ Id, Vgs

2.1mOhm @ 100A, 15V

Vgs(th) (Max) @ Id

3.9V @ 193µA

Gate Charge (Qg) (Max) @ Vgs

144 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

12000 pF @ 50 V

FET Type

N-Channel

Power Dissipation (Max)

3.8W (Ta), 300W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

27A (Ta), 243A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V, 15V

Mounting Type

Surface Mount

Supplier Device Package

PG-HSOF-8-1

Package / Case

8-PowerSFN

Packaging

Tape & Reel (TR); Cut Tape (CT)