Component information
IPT067N20NM6ATMA1
IPT067N20NM6ATMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Rds On (Max) @ Id, Vgs
- 6.2mOhm @ 126A, 15V
- Mfr
- Infineon Technologies
- Vgs(th) (Max) @ Id
- 4.5V @ 251µA
- Series
- OptiMOS™ 6
- Gate Charge (Qg) (Max) @ Vgs
- 107 nC @ 10 V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Vgs (Max)
- ±20V
- Part Status
- Active
- Input Capacitance (Ciss) (Max) @ Vds
- 7300 pF @ 100 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 3.8W (Ta), 300W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 200 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 15.3A (Ta), 137A (Tc)
- Supplier Device Package
- PG-HSOF-8-1
- Drive Voltage (Max Rds On, Min Rds On)
- 10V, 15V
- Package / Case
- 8-PowerSFN
Documentation and references
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