Component information
IPT60T022S7XTMA1
Infineon Technologies IPT60T022S7XTMA1: Single FETs, MOSFETs. Package / Case: 8-PowerSFN. Supplier Device Package: PG-HSOF-8-2.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Infineon Technologies
- Series
- CoolMOS™
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 22mOhm @ 23A, 12V
- Vgs(th) (Max) @ Id
- 4.5V @ 1.43mA
- Gate Charge (Qg) (Max) @ Vgs
- 150 nC @ 12 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 5640 pF @ 300 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 390W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 600 V
- Current - Continuous Drain (Id) @ 25°C
- 23A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)
- 12V
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-HSOF-8-2
- Package / Case
- 8-PowerSFN
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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