Component information
IPTG111N20NM3FDATMA1
IPTG111N20NM3FDATMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 4V @ 267µA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 81 nC @ 10 V
- Series
- OptiMOS™ 3
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 7000 pF @ 100 V
- Part Status
- Discontinued at DigiKey
- Power Dissipation (Max)
- 3.8W (Ta), 375W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 200 V
- Supplier Device Package
- PG-HSOG-8-1
- Current - Continuous Drain (Id) @ 25°C
- 10.8A (Ta), 108A (Tc)
- Package / Case
- 8-PowerSMD, Gull Wing
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Base Product Number
- IPTG111N
- Rds On (Max) @ Id, Vgs
- 11.1mOhm @ 96A, 10V
Documentation and references
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