Component information
IQD020N10NM5SCATMA1
Infineon Technologies IQD020N10NM5SCATMA1: Single FETs, MOSFETs. Package / Case: 8-PowerWDFN. Supplier Device Package: PG-WHSON-8-U02.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Infineon Technologies
- Series
- OptiMOS™ 5
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 2.05mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id
- 3.8V @ 159µA
- Gate Charge (Qg) (Max) @ Vgs
- 134 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 9500 pF @ 50 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 3W (Ta), 333W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 100 V
- Current - Continuous Drain (Id) @ 25°C
- 26A (Ta), 276A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-WHSON-8-U02
- Package / Case
- 8-PowerWDFN
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
Documentation can be discussed with your inquiry.
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