IQE004NE1LM7SCATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™ 7

Part Status

Active

Rds On (Max) @ Id, Vgs

0.45mOhm @ 30A, 7V

Vgs(th) (Max) @ Id

2V @ 432µA

Gate Charge (Qg) (Max) @ Vgs

55 nC @ 7 V

Vgs (Max)

±7V

Input Capacitance (Ciss) (Max) @ Vds

6240 pF @ 7.5 V

FET Type

N-Channel

Power Dissipation (Max)

2.1W (Ta), 89W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

15 V

Current - Continuous Drain (Id) @ 25°C

58A (Ta), 379A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 7V

Mounting Type

Surface Mount

Supplier Device Package

PG-WHSON-8

Package / Case

8-PowerWDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)