IQE036N08NM6CGSCATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™ 6

Part Status

Active

Rds On (Max) @ Id, Vgs

3.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

3.5V @ 49.8µA

Gate Charge (Qg) (Max) @ Vgs

38 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2600 pF @ 40 V

FET Type

N-Channel

Power Dissipation (Max)

2.5W (Ta), 125W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C

Drain to Source Voltage (Vdss)

80 V

Current - Continuous Drain (Id) @ 25°C

16.7A (Ta), 118A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Mounting Type

Surface Mount

Supplier Device Package

PG-WHTFN-9-1

Package / Case

9-PowerWDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)