IQEH46NE2LM7ZCGSCATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™ 7

Part Status

Active

Rds On (Max) @ Id, Vgs

0.48mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

1.7V @ 432µA

Gate Charge (Qg) (Max) @ Vgs

63 nC @ 10 V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

6100 pF @ 12 V

FET Type

N-Channel

Power Dissipation (Max)

2.5W (Ta), 150W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

25 V

Current - Continuous Drain (Id) @ 25°C

55A (Ta), 430A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Supplier Device Package

PG-WHTFN-9-1

Package / Case

9-PowerWDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)