IRF4905LPBF

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

HEXFET®

Part Status

Active

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

180 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3500 pF @ 25 V

Power Dissipation (Max)

170W (Tc)

FET Type

P-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55 V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 42A, 10V

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging

Tube

Base Product Number

IRF4905