Component information

IRF630

IRF630 component information and product attributes.

Product information

Manufacturer
STMicroelectronics
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
STMicroelectronics
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Series
MESH OVERLAY™ II
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V
Part Status
Active
Power Dissipation (Max)
75W (Tc)
FET Type
N-Channel
Operating Temperature
-65°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
200 V
Supplier Device Package
TO-220
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Package / Case
TO-220-3
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IRF6
Rds On (Max) @ Id, Vgs
400mOhm @ 4.5A, 10V

Documentation and references

Manufacturer datasheet ↗

Distributor reference ↗

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