Component information
IRF6629TRPBF
IRF6629TRPBF component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Rds On (Max) @ Id, Vgs
- 2.1mOhm @ 29A, 10V
- Mfr
- Infineon Technologies
- Vgs(th) (Max) @ Id
- 2.35V @ 100µA
- Series
- HEXFET®
- Gate Charge (Qg) (Max) @ Vgs
- 51 nC @ 4.5 V
- Packaging
- Tape & Reel (TR)
- Vgs (Max)
- ±20V
- Part Status
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds
- 4260 pF @ 13 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 2.8W (Ta), 100W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 25 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 29A (Ta), 180A (Tc)
- Supplier Device Package
- DIRECTFET™ MX
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- DirectFET™ Isometric MX
Documentation and references
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