Component information

IRF6644TRPBF

IRF6644TRPBF component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
4.8V @ 150µA
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Series
HEXFET®
Vgs (Max)
±20V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
2210 pF @ 25 V
Part Status
Active
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
FET Type
N-Channel
Operating Temperature
-40°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
100 V
Supplier Device Package
DIRECTFET™ MN
Current - Continuous Drain (Id) @ 25°C
10.3A (Ta), 60A (Tc)
Package / Case
DirectFET™ Isometric MN
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IRF6644
Rds On (Max) @ Id, Vgs
13mOhm @ 10.3A, 10V

Documentation and references

Manufacturer document ↗

Distributor reference ↗

Request a quotation

Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.

Prepare an RFQ

Before requesting a quotation

Check the complete part number