IRF6717MTRPBF

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

HEXFET®

Part Status

Not For New Designs

Vgs(th) (Max) @ Id

2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

69 nC @ 4.5 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6750 pF @ 13 V

Power Dissipation (Max)

2.8W (Ta), 96W (Tc)

FET Type

N-Channel

Operating Temperature

-40°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25 V

Current - Continuous Drain (Id) @ 25°C

38A (Ta), 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.25mOhm @ 38A, 10V

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MX

Package / Case

DirectFET™ Isometric MX

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

IRF6717