Component information
IRF6718L2TRPBF
IRF6718L2TRPBF component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Rds On (Max) @ Id, Vgs
- 0.7mOhm @ 61A, 10V
- Mfr
- Infineon Technologies
- Vgs(th) (Max) @ Id
- 2.35V @ 150µA
- Series
- HEXFET®
- Gate Charge (Qg) (Max) @ Vgs
- 96 nC @ 4.5 V
- Packaging
- Tape & Reel (TR)
- Vgs (Max)
- ±20V
- Part Status
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds
- 6500 pF @ 13 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 4.3W (Ta), 83W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 25 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 61A (Ta), 270A (Tc)
- Supplier Device Package
- DIRECTFET L6
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- DirectFET™ Isometric L6
Documentation and references
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