Component information

IRF7201TRPBF

IRF7201TRPBF component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
1V @ 250µA
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Series
HEXFET®
Vgs (Max)
±20V
Packaging
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
Part Status
Obsolete
Power Dissipation (Max)
2.5W (Tc)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
30 V
Supplier Device Package
8-SO
Current - Continuous Drain (Id) @ 25°C
7.3A (Tc)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
IRF7201
Rds On (Max) @ Id, Vgs
30mOhm @ 7.3A, 10V

Documentation and references

Manufacturer datasheet ↗

Distributor reference ↗

Request a quotation

Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.

Prepare an RFQ

Before requesting a quotation

Check the complete part number