Component information
IRF7341GTRPBF
Infineon Technologies IRF7341GTRPBF: FET, MOSFET Arrays. Package / Case: 8-SOIC (0.154", 3.90mm Width). Supplier Device Package: 8-SO.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Infineon Technologies
- Series
- HEXFET®
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs
- 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 780pF @ 25V
- Power - Max
- 2.4W
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Configuration
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 55V
- Current - Continuous Drain (Id) @ 25°C
- 5.1A
- Rds On (Max) @ Id, Vgs
- 50mOhm @ 5.1A, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package
- 8-SO
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- IRF734
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ