Component information

IRF7342PBF

IRF7342PBF component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Rds On (Max) @ Id, Vgs
105mOhm @ 3.4A, 10V
Manufacturer
Infineon Technologies
Vgs(th) (Max) @ Id
1V @ 250µA
Series
HEXFET®
Gate Charge (Qg) (Max) @ Vgs
38nC @ 10V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
690pF @ 25V
Part Status
Discontinued at DigiKey
Power - Max
2W
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Configuration
2 P-Channel (Dual)
Mounting Type
Surface Mount
FET Feature
Logic Level Gate
Package / Case
8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss)
55V
Supplier Device Package
8-SO
Current - Continuous Drain (Id) @ 25°C
3.4A
Base Product Number
IRF734

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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