Component information
IRF7379PBF
IRF7379PBF component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Manufacturer
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 10V
- Series
- HEXFET®
- Input Capacitance (Ciss) (Max) @ Vds
- 520pF @ 25V
- Packaging
- Tube
- Power - Max
- 2.5W
- Part Status
- Obsolete
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Configuration
- N and P-Channel
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Drain to Source Voltage (Vdss)
- 30V
- Supplier Device Package
- 8-SO
- Current - Continuous Drain (Id) @ 25°C
- 5.8A, 4.3A
- Base Product Number
- IRF737
- Rds On (Max) @ Id, Vgs
- 45mOhm @ 5.8A, 10V
Documentation and references
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