Component information

IRF7402TR

IRF7402TR component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Rds On (Max) @ Id, Vgs
35mOhm @ 4.1A, 4.5V
Mfr
Infineon Technologies
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)
Series
HEXFET®
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 4.5 V
Packaging
Tape & Reel (TR)
Vgs (Max)
±12V
Part Status
Obsolete
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 15 V
FET Type
N-Channel
Power Dissipation (Max)
2.5W (Ta)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
20 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
6.8A (Ta)
Supplier Device Package
8-SO
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Package / Case
8-SOIC (0.154", 3.90mm Width)

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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