Component information
IRF7524D1PBF
IRF7524D1PBF component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 700mV @ 250µA (Min)
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 8.2 nC @ 4.5 V
- Series
- FETKY™
- Vgs (Max)
- ±12V
- Packaging
- Tube
- Input Capacitance (Ciss) (Max) @ Vds
- 240 pF @ 15 V
- Part Status
- Obsolete
- FET Feature
- Schottky Diode (Isolated)
- FET Type
- P-Channel
- Power Dissipation (Max)
- 1.25W (Ta)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 20 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 1.7A (Ta)
- Supplier Device Package
- Micro8™
- Drive Voltage (Max Rds On, Min Rds On)
- 2.7V, 4.5V
- Package / Case
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Rds On (Max) @ Id, Vgs
- 270mOhm @ 1.2A, 4.5V
Documentation and references
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