Component information
IRF7707
IRF7707 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Rds On (Max) @ Id, Vgs
- 22mOhm @ 7A, 4.5V
- Mfr
- Infineon Technologies
- Vgs(th) (Max) @ Id
- 1.2V @ 250µA
- Series
- HEXFET®
- Gate Charge (Qg) (Max) @ Vgs
- 47 nC @ 4.5 V
- Packaging
- Tube
- Vgs (Max)
- ±12V
- Part Status
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds
- 2361 pF @ 15 V
- FET Type
- P-Channel
- Power Dissipation (Max)
- 1.5W (Ta)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 20 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 7A (Ta)
- Supplier Device Package
- 8-TSSOP
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Package / Case
- 8-TSSOP (0.173", 4.40mm Width)
Documentation and references
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