Component information

IRF7726TRPBF

IRF7726TRPBF component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
2.5V @ 250µA
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 10 V
Series
HEXFET®
Vgs (Max)
±20V
Packaging
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds
2204 pF @ 25 V
Part Status
Discontinued at DigiKey
Power Dissipation (Max)
1.79W (Ta)
FET Type
P-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
30 V
Supplier Device Package
Micro8™
Current - Continuous Drain (Id) @ 25°C
7A (Ta)
Package / Case
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
IRF7726
Rds On (Max) @ Id, Vgs
26mOhm @ 7A, 10V

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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