Component information

IRF8721TRPBF

IRF8721TRPBF component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
2.35V @ 25µA
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 4.5 V
Series
HEXFET®
Vgs (Max)
±20V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
1040 pF @ 15 V
Part Status
Obsolete
Power Dissipation (Max)
2.5W (Ta)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
30 V
Supplier Device Package
8-SO
Current - Continuous Drain (Id) @ 25°C
14A (Ta)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
IRF8721
Rds On (Max) @ Id, Vgs
8.5mOhm @ 14A, 10V

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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