Component information
IRF9Z24NPBF
IRF9Z24NPBF component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 19 nC @ 10 V
- Series
- HEXFET®
- Vgs (Max)
- ±20V
- Packaging
- Tube
- Input Capacitance (Ciss) (Max) @ Vds
- 350 pF @ 25 V
- Part Status
- Not For New Designs
- Power Dissipation (Max)
- 45W (Tc)
- FET Type
- P-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Through Hole
- Drain to Source Voltage (Vdss)
- 55 V
- Supplier Device Package
- TO-220AB
- Current - Continuous Drain (Id) @ 25°C
- 12A (Tc)
- Package / Case
- TO-220-3
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Base Product Number
- IRF9Z24
- Rds On (Max) @ Id, Vgs
- 175mOhm @ 7.2A, 10V
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ