Component information
IRFB23N20DPBF
IRFB23N20DPBF component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 14A, 10V
- Mfr
- Infineon Technologies
- Vgs(th) (Max) @ Id
- 5.5V @ 250µA
- Series
- HEXFET®
- Gate Charge (Qg) (Max) @ Vgs
- 86 nC @ 10 V
- Packaging
- Tube
- Vgs (Max)
- ±30V
- Part Status
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds
- 1960 pF @ 25 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 3.8W (Ta), 170W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 200 V
- Mounting Type
- Through Hole
- Current - Continuous Drain (Id) @ 25°C
- 24A (Tc)
- Supplier Device Package
- TO-220AB
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-220-3
Documentation and references
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