Component information
IRFB4332PBFXKMA1
Infineon Technologies IRFB4332PBFXKMA1: Single FETs, MOSFETs. Package / Case: TO-220-3. Supplier Device Package: TO-220AB.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Infineon Technologies
- Series
- HEXFET®
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 33mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 150 nC @ 10 V
- Vgs (Max)
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds
- 5860 pF @ 25 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 390W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 175°C
- Drain to Source Voltage (Vdss)
- 250 V
- Current - Continuous Drain (Id) @ 25°C
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-220AB
- Package / Case
- TO-220-3
- Packaging
- Tube
Documentation and references
Documentation can be discussed with your inquiry.
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