Component information
IRFB5620PBF
IRFB5620PBF component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 5V @ 100µA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 38 nC @ 10 V
- Packaging
- Tube
- Vgs (Max)
- ±20V
- Part Status
- Active
- Input Capacitance (Ciss) (Max) @ Vds
- 1710 pF @ 50 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 144W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 200 V
- Mounting Type
- Through Hole
- Current - Continuous Drain (Id) @ 25°C
- 25A (Tc)
- Supplier Device Package
- TO-220AB
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-220-3
- Rds On (Max) @ Id, Vgs
- 72.5mOhm @ 15A, 10V
- Base Product Number
- IRFB5620
Documentation and references
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