Component information

IRFH5006TRPBF

IRFH5006TRPBF component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
4V @ 150µA
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Series
HEXFET®
Vgs (Max)
±20V
Packaging
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds
4175 pF @ 30 V
Part Status
Obsolete
Power Dissipation (Max)
3.6W (Ta), 156W (Tc)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
60 V
Supplier Device Package
8-PQFN (5x6)
Current - Continuous Drain (Id) @ 25°C
21A (Ta), 100A (Tc)
Package / Case
8-PowerTDFN
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IRFH5006
Rds On (Max) @ Id, Vgs
4.1mOhm @ 50A, 10V

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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