Component information
IRFH5110TRPBF
IRFH5110TRPBF component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 4V @ 100µA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 72 nC @ 10 V
- Series
- HEXFET®
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 3152 pF @ 25 V
- Part Status
- Obsolete
- Power Dissipation (Max)
- 3.6W (Ta), 114W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 100 V
- Supplier Device Package
- 8-PQFN (5x6)
- Current - Continuous Drain (Id) @ 25°C
- 11A (Ta), 63A (Tc)
- Package / Case
- 8-PowerVDFN
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Base Product Number
- IRFH5110
- Rds On (Max) @ Id, Vgs
- 12.4mOhm @ 37A, 10V
Documentation and references
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