Component information

IRFHM9331TRPBF

IRFHM9331TRPBF component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
2.4V @ 25µA
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Series
HEXFET®
Vgs (Max)
±25V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
1543 pF @ 25 V
Part Status
Obsolete
Power Dissipation (Max)
2.8W (Ta)
FET Type
P-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
30 V
Supplier Device Package
PQFN (3x3)
Current - Continuous Drain (Id) @ 25°C
11A (Ta), 24A (Tc)
Package / Case
8-PowerTDFN
Drive Voltage (Max Rds On, Min Rds On)
10V, 20V
Base Product Number
IRFHM9331
Rds On (Max) @ Id, Vgs
10mOhm @ 11A, 20V

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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