Component information

IRFHS9301TRPBF

IRFHS9301TRPBF component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
2.4V @ 25µA
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Series
HEXFET®
Vgs (Max)
±20V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
580 pF @ 25 V
Part Status
Obsolete
Power Dissipation (Max)
2.1W (Ta)
FET Type
P-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
30 V
Supplier Device Package
6-PQFN (2x2) (DFN2020)
Current - Continuous Drain (Id) @ 25°C
6A (Ta), 13A (Tc)
Package / Case
6-PowerVDFN
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
IRFHS9301
Rds On (Max) @ Id, Vgs
37mOhm @ 7.8A, 10V

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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