Component information
IRFI4212H-117P
IRFI4212H-117P component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Manufacturer
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 18nC @ 10V
- Packaging
- Tube
- Input Capacitance (Ciss) (Max) @ Vds
- 490pF @ 50V
- Part Status
- Obsolete
- Power - Max
- 18W
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Dual)
- Mounting Type
- Through Hole
- Drain to Source Voltage (Vdss)
- 100V
- Package / Case
- TO-220-5 Full Pack
- Current - Continuous Drain (Id) @ 25°C
- 11A
- Supplier Device Package
- TO-220-5 Full-Pak
- Rds On (Max) @ Id, Vgs
- 72.5mOhm @ 6.6A, 10V
- Base Product Number
- IRFI4212
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ