Component information

IRFI4212H-117PXKMA1

IRFI4212H-117PXKMA1 component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Vgs(th) (Max) @ Id
5V @ 250µA
Manufacturer
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
490pF @ 50V
Part Status
Active
Power - Max
18W (Tc)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Configuration
2 N-Channel (Dual)
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
100V
Package / Case
TO-220-5 Full Pack, Formed Leads
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Supplier Device Package
TO-220-5 Full-Pak
Rds On (Max) @ Id, Vgs
72.5mOhm @ 6.6A, 10V
Base Product Number
IRFI4212

Documentation and references

Manufacturer document ↗

Distributor reference ↗

Request a quotation

Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.

Prepare an RFQ

Before requesting a quotation

Check the complete part number