Component information

IRFL4310TRPBF

IRFL4310TRPBF component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Series
HEXFET®
Vgs (Max)
±20V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V
Part Status
Active
Power Dissipation (Max)
1W (Ta)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
100 V
Supplier Device Package
SOT-223
Current - Continuous Drain (Id) @ 25°C
1.6A (Ta)
Package / Case
TO-261-4, TO-261AA
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IRFL4310
Rds On (Max) @ Id, Vgs
200mOhm @ 1.6A, 10V

Documentation and references

Manufacturer document ↗

Distributor reference ↗

Request a quotation

Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.

Prepare an RFQ

Before requesting a quotation

Check the complete part number