Component information
IRGB20B60PD1PBF
IRGB20B60PD1PBF component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Switching Energy
- 95µJ (on), 100µJ (off)
- Manufacturer
- Infineon Technologies
- Input Type
- Standard
- Packaging
- Tube
- Gate Charge
- 68 nC
- Part Status
- Obsolete
- Td (on/off) @ 25°C
- 20ns/115ns
- IGBT Type
- NPT
- Test Condition
- 390V, 13A, 10Ohm, 15V
- Voltage - Collector Emitter Breakdown (Max)
- 600 V
- Reverse Recovery Time (trr)
- 28 ns
- Current - Collector (Ic) (Max)
- 40 A
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Current - Collector Pulsed (Icm)
- 80 A
- Mounting Type
- Through Hole
- Vce(on) (Max) @ Vge, Ic
- 2.8V @ 15V, 20A
- Package / Case
- TO-220-3
- Power - Max
- 215 W
- Supplier Device Package
- TO-220AB
Documentation and references
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