Component information
IRGIB10B60KD1P
Infineon Technologies IRGIB10B60KD1P: Single IGBTs. Package / Case: TO-220-3 Full Pack. Supplier Device Package: TO-220AB Full-Pak.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Manufacturer
- Infineon Technologies
- Part Status
- Obsolete
- Switching Energy
- 156µJ (on), 165µJ (off)
- Input Type
- Standard
- Gate Charge
- 41 nC
- Td (on/off) @ 25°C
- 25ns/180ns
- IGBT Type
- NPT
- Test Condition
- 400V, 10A, 50Ohm, 15V
- Voltage - Collector Emitter Breakdown (Max)
- 600 V
- Reverse Recovery Time (trr)
- 79 ns
- Current - Collector (Ic) (Max)
- 16 A
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Current - Collector Pulsed (Icm)
- 32 A
- Vce(on) (Max) @ Vge, Ic
- 2.1V @ 15V, 10A
- Power - Max
- 44 W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Supplier Device Package
- TO-220AB Full-Pak
- Packaging
- Tube
Documentation and references
Documentation can be discussed with your inquiry.
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