Component information
IRL100HS121
IRL100HS121 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 2.3V @ 10µA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 5.6 nC @ 4.5 V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Vgs (Max)
- ±20V
- Part Status
- Active
- Input Capacitance (Ciss) (Max) @ Vds
- 440 pF @ 50 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 11.5W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 100 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 11A (Tc)
- Supplier Device Package
- 6-PQFN (2x2) (DFN2020)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- 6-PowerVDFN
- Rds On (Max) @ Id, Vgs
- 42mOhm @ 6.7A, 10V
- Base Product Number
- IRL100
Documentation and references
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