Component information

IRL40S212ARMA1

Infineon Technologies IRL40S212ARMA1: Single FETs, MOSFETs. Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB. Supplier Device Package: PG-TO263-3.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Mfr
Infineon Technologies
Series
HEXFET®, StrongIRFET™
Part Status
Active
Vgs(th) (Max) @ Id
2.4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
137 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8320 pF @ 25 V
Power Dissipation (Max)
231W (Tc)
FET Type
N-Channel
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 100A, 10V
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
Tape & Reel (TR); Cut Tape (CT)
Base Product Number
IRL40S212

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