Component information

IRL640STRLPBF

IRL640STRLPBF component information and product attributes.

Product information

Manufacturer
Vishay Siliconix
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
2V @ 250µA
Mfr
Vishay Siliconix
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 5 V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±10V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 25 V
FET Type
N-Channel
Power Dissipation (Max)
3.1W (Ta), 125W (Tc)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
200 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
17A (Tc)
Supplier Device Package
TO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs
180mOhm @ 10A, 5V
Base Product Number
IRL640

Documentation and references

Reference document ↗

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