IRL80HS120

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Part Status

Active

Vgs(th) (Max) @ Id

2V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

7 nC @ 4.5 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

540 pF @ 25 V

FET Type

N-Channel

Power Dissipation (Max)

11.5W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

80 V

Current - Continuous Drain (Id) @ 25°C

12.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

32mOhm @ 7.5A, 10V

Mounting Type

Surface Mount

Supplier Device Package

6-PQFN (2x2) (DFN2020)

Package / Case

6-PowerVDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

IRL80HS120