IRLHS6376TRPBF

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Infineon Technologies

Series

HEXFET®

Part Status

Active

Rds On (Max) @ Id, Vgs

63mOhm @ 3.4A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

2.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

270pF @ 25V

Power - Max

1.5W

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Configuration

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.6A

Mounting Type

Surface Mount

Package / Case

6-PowerVDFN

Supplier Device Package

6-PQFN Dual (2x2)

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

IRLHS6376