Component information

IRLML6302TRPBF

IRLML6302TRPBF component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
1.5V @ 250µA
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
3.6 nC @ 4.45 V
Series
HEXFET®
Vgs (Max)
±12V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
97 pF @ 15 V
Part Status
Obsolete
Power Dissipation (Max)
540mW (Ta)
FET Type
P-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
20 V
Supplier Device Package
Micro3™/SOT-23
Current - Continuous Drain (Id) @ 25°C
780mA (Ta)
Package / Case
TO-236-3, SC-59, SOT-23-3
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Base Product Number
IRLML6302
Rds On (Max) @ Id, Vgs
600mOhm @ 610mA, 4.5V

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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