Component information

IRLMS1902TRPBF

IRLMS1902TRPBF component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 4.5 V
Series
HEXFET®
Vgs (Max)
±12V
Packaging
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 15 V
Part Status
Obsolete
Power Dissipation (Max)
1.7W (Ta)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
20 V
Supplier Device Package
Micro6™(TSOP-6)
Current - Continuous Drain (Id) @ 25°C
3.2A (Ta)
Package / Case
SOT-23-6
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Base Product Number
IRLMS1902
Rds On (Max) @ Id, Vgs
100mOhm @ 2.2A, 4.5V

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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