Component information

IRLMS5703TRPBF

IRLMS5703TRPBF component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Rds On (Max) @ Id, Vgs
180mOhm @ 1.6A, 10V
Mfr
Infineon Technologies
Vgs(th) (Max) @ Id
1V @ 250µA
Series
HEXFET®
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Packaging
Tape & Reel (TR)
Vgs (Max)
±20V
Part Status
Obsolete
Input Capacitance (Ciss) (Max) @ Vds
170 pF @ 25 V
FET Type
P-Channel
Power Dissipation (Max)
1.7W (Ta)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
30 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
2.4A (Ta)
Supplier Device Package
Micro6™(TSOP-6)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package / Case
SOT-23-6

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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